Conversely, amorphous metal oxides are much more readily prepared by low-temperature solution processing methods but often lack the charge-transport properties of crystalline semiconductors. However, they are traditionally not amenable to scalable and sustainable solution-processing techniques. Crystalline metal-oxide hole-transport layers (HTLs) such as NiO and CuO x exhibit high performance and stability. Hole-selective charge-transport layers are an important part of modern thin-film electronics, serving to direct electron flow and prevent leakage current.
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